Skip to content
Home » Why CFM Sputtering?

Why CFM Sputtering?


  • No expensive ion source or plasma source required for high ion current energy generation
  • No trace elements of T or Fe within coated films normally generated from ion or plasma source
  • No need for deposition rate controller, crystal monitor or X-Y sweep controller
  • Film thicknesses are simply time/ power controlled.
  • Superior water vapor removal with Meissner trap and fast cool down/ rapid defrost chiller
  • Repeatable coating uniformities, across the substrate, substrate to substrate, within the batch and run to run
  • Up to 3x substrate load capacity over electron beam evaporation coaters within identical footprint
  • Quick substrate load/ unload with ability to mix substrate sizes within the same load
  • System is readily adaptable for flat, circular, irregular size or sheet type substrates
  • Simplified machine design with only two internal moving parts – substrate drum & indexing shutter
  • Full PLC with touch panel control along with factory Ethernet link
  • Readily removeable and easy to clean stainless steel shielding
  • Slide and tilt cathode feature which allows for quick target material change
  • Stainless steel vacuum chamber with viewports and exterior water cooled channel cooling
  • Scaleable technology – four standard coating system platforms available – others on request
  • Adaptable technology – transferable from drum type to roll coater or inline system


  • Provides 10x greater kinetic energy without the high heating effect normally generated in electron beam evaporation
  • Allows room temperature coatings – ideal for sensitive substrates as polymers, plastics, glass
  • Spectrally stable coatings
  • Amorphous film microstructure
  • Near bulk film densification
  • Ultra-smooth surface topography
  • Better adherent coatings
  • Typical substrate uniformity of <±1%
  • Low film stress
  • Efficient and complete film oxidation with minimal absorption
  • Maximum deposition rates due to pulsed DC reactive sputtering process
  • Highest utilization of source materials. Four inches vs. one meter source to substrate distance. More material is deposited onto the substrates, not the chamber walls
  • Repeatable machine performance and long term reliability with little maintenance needed