Modeling and Optimization of Film Thickness Variation for Plasma Enhanced Chemical Vapor Deposition Processes (PECVD)
OVERVIEW
This paper describes a method for modeling film thickness variation across the deposition area within plasma enhanced chemical vapor deposition (PECVD) processes. The model enables identification and optimization of film thickness uniformity sensitivities to electrode configuration, temperature deposition system design and gas flow distribution.
PECVD deposition utilizes co-planar 300mm diameter electrodes with separate RF power matching to each electrode. The system has capability to adjust electrode separation and electrode temperature as parameters to optimize uniformity. Vacuum is achieved using dry pumping with real time control of the butterfly valve position for active pressure control.